Journal of Infrared, Millimeter, and Terahertz Waves

, Volume 35, Issue 12, pp 1030–1044

Simulation of Terahertz Generation from Lateral Diffusion Currents in Semiconductor Devices

  • Mark E. Barnes
  • Geoff J. Daniell
  • Paul Gow
  • Vasilis Apostolopoulos
Article

DOI: 10.1007/s10762-014-0111-y

Cite this article as:
Barnes, M.E., Daniell, G.J., Gow, P. et al. J Infrared Milli Terahz Waves (2014) 35: 1030. doi:10.1007/s10762-014-0111-y

Abstract

In this paper we model the carrier dynamics and resulting THz emission from lateral diffusion currents within a semiconductor device which has been partially masked by a metallic mask. We present a numerical 1D model and a 1D Monte Carlo simulation which both demonstrate that regardless of the excitation laser spot shape we do not expect to see measurable THz emission in the direction of the optical pump propagation from lateral diffusion currents. Experimentally such devices do produce strong THz emission. We analytically investigate the role of the metal mask and we found that it suppresses the emission of dipoles that are in a region that is less than a wavelength away from the interface. The results from the numerical model are also included in a finite element analysis model of the geometry which predicts THz emission if and only if the metal mask is present.

Keywords

Terahertz sources Carrier dynamics Photo-Dember Semiconductor device modeling 

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Mark E. Barnes
    • 1
  • Geoff J. Daniell
    • 1
  • Paul Gow
    • 1
  • Vasilis Apostolopoulos
    • 1
  1. 1.School of Physics and AstronomyUniversity of SouthamptonSouthamptonUnited Kingdom

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