Abstract
We compare the electrical power dependence of the lattice temperature and the electronic temperature of GaAs/AlxGa1-xAs THz quantum cascade lasers (QCLs) with different active region schemes, as extracted by the analysis of microprobe band-to-band photoluminescence experiments. Thermalized non-equilibrium distributions are found in all classes of QCLs. While in the case of bound-to-continuum structures all subbands share the same temperature, the upper laser level of active regions based on the resonant-phonon scheme heats up by ΔT ~ 100 K with respect to lower energy levels. The comparison among samples with different Al mole fractions show that the use of smaller x values leads to larger electronic temperatures.
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Acknowledgements
The authors acknowledge Q. Hu, B. S. Williams, S. Kumar, J. Faist, G. Scalari, A. Tredicucci, S. Barbieri, C. Sirtori, H. E. Beere, D. A. Ritchie and J. L. Reno for providing QCL devices and useful discussions. M.S.V. acknowledges financial support of the Italian Ministry of Education, University, and Research (MIUR) through the program “FIRB-Futuro in Ricerca 2010" RBFR10LULP “Fundamental research on terahertz photonic devices". G. S. and V. S. acknowledge partial finantial support of MIUR through the programs PON01_02238, PON02_00576 and PON02_00675.
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Scamarcio, G., Vitiello, M.S. & Spagnolo, V. Hot Electrons in THz Quantum Cascade Lasers. J Infrared Milli Terahz Waves 34, 357–373 (2013). https://doi.org/10.1007/s10762-013-9979-1
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DOI: https://doi.org/10.1007/s10762-013-9979-1