Invited Review Article

Journal of Infrared, Millimeter, and Terahertz Waves

, Volume 33, Issue 6, pp 559-592

First online:

Optically- and Electrically-Stimulated Terahertz Radiation Emission from Indium Nitride

  • Ingrid WilkeAffiliated withDepartment of Physics, Applied Physics & Astronomy, Rensselaer Polytechnic Institute Email author 
  • , Yujie J. DingAffiliated withDepartment of Electrical and Computer Engineering, Lehigh University
  • , Tatiana V. ShubinaAffiliated withIoffe Physico-Technical Institute, Russian Academy of Sciences

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Indium nitride is a novel narrow band gap semiconductor. The material is a potential strong source of terahertz frequency electromagnetic radiation with applications in time-domain terahertz spectroscopy and imaging systems. This article reviews recent experimental research on terahertz emission from the binary compound semiconductor indium nitride excited by near-infrared laser beams or microseconds electrical pulses. Advantages of indium nitride as terahertz radiation source material are discussed. It is demonstrated that different mechanisms contribute to the emission of terahertz radiation from indium nitride. The emission of up to 2.4 μW of THz radiation power is observed when InN is excited with near-infrared femtosecond laser pulses at an average power of 1 W.


High-speed optical techniques III-V semiconductors Narrow band gap semiconductors Indium compounds Terahertz wave generation Photoconductivity Rectification Polaritons Surface plasmon