Journal of Infrared, Millimeter, and Terahertz Waves

, Volume 33, Issue 6, pp 559–592

Optically- and Electrically-Stimulated Terahertz Radiation Emission from Indium Nitride

Authors

    • Department of Physics, Applied Physics & AstronomyRensselaer Polytechnic Institute
  • Yujie J. Ding
    • Department of Electrical and Computer EngineeringLehigh University
  • Tatiana V. Shubina
    • Ioffe Physico-Technical Institute, Russian Academy of Sciences
Invited Review Article

DOI: 10.1007/s10762-012-9904-z

Cite this article as:
Wilke, I., Ding, Y.J. & Shubina, T.V. J Infrared Milli Terahz Waves (2012) 33: 559. doi:10.1007/s10762-012-9904-z

Abstract

Indium nitride is a novel narrow band gap semiconductor. The material is a potential strong source of terahertz frequency electromagnetic radiation with applications in time-domain terahertz spectroscopy and imaging systems. This article reviews recent experimental research on terahertz emission from the binary compound semiconductor indium nitride excited by near-infrared laser beams or microseconds electrical pulses. Advantages of indium nitride as terahertz radiation source material are discussed. It is demonstrated that different mechanisms contribute to the emission of terahertz radiation from indium nitride. The emission of up to 2.4 μW of THz radiation power is observed when InN is excited with near-infrared femtosecond laser pulses at an average power of 1 W.

Keywords

High-speed optical techniquesIII-V semiconductorsNarrow band gap semiconductorsIndium compoundsTerahertz wave generationPhotoconductivityRectificationPolaritonsSurface plasmon

Copyright information

© Springer Science+Business Media, LLC 2012