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A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

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Abstract

A new direct parameter-extraction technique applied to the small-signal equivalent circuit of heterojunction bipolar transistor (HBT) is presented. The method is based on first determining the parasitic elements and then the intrinsic elements analytically. Concerning the intrinsic parameters, all the elements are extracted using exact closed-form equations derived in terms of S-parameters by reducing the small-signal models to the simplified using peeling algorithm. The validity of the new extraction methodology is demonstrated by applying it to a 1 × 15 µm2 InP HBT device within the frequency range of 0.1–40 GHz.

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Acknowledgments

This project was supported by the Doctoral Scientific Research Foundation of Henan University of Science and Technology (Grant No. 400613480011), and the Foundation of He’nan Educational Committee (Grant No. 15A510001).

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Authors and Affiliations

  1. Electrical Engineering College, Henan University of Science and Technology, Mail No. #60, No. 263 KaiYuan Road, Luoyang, China

    Zhang Jincan, Liu Bo, Zhang Leiming, Sun Ligong, Wang Jinchan & Song Lu

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  1. Zhang Jincan
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  2. Liu Bo
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  3. Zhang Leiming
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  4. Sun Ligong
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  5. Wang Jinchan
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  6. Song Lu
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Correspondence to Zhang Jincan.

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Jincan, Z., Bo, L., Leiming, Z. et al. A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit. Analog Integr Circ Sig Process 85, 405–411 (2015). https://doi.org/10.1007/s10470-015-0586-z

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  • DOI: https://doi.org/10.1007/s10470-015-0586-z

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