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A 0.25-V 22-nS symmetrical bulk-driven OTA for low-frequency \(G_m\)-C applications in 130-nm digital CMOS process

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Abstract

This paper presents a 0.25-V supplied bulk-driven symmetrical OTA implemented in 130-nm CMOS process. By operating in weak inversion, and using a distributed layout approach, the OTA can benefit from the voltage reduction and high linearity enabled by halo-implanted transistors. The proposed circuit consumes only 10-nW, features a low transconductance of 22-nS, and a total harmonic distortion of 0.53 % for a 100-mVpp input voltage, thus making it suitable for low-frequency and low-power \(G_m\)-C applications.

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Acknowledgments

This work was supported by the National Research Council (CNPq) under Grant 300618/2012-3. The authors wish to thank CAPES and CNPq for the financial support provided to those involved in this work, and MOSIS for chip fabrication

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Authors and Affiliations

  1. Systems Engineering and Information Technology Institute, Federal University of Itajubá, Itajubá, 37500-903, Brazil

    Gustavo D. Colletta, Luís H. C. Ferreira & Tales C. Pimenta

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  1. Gustavo D. Colletta
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  2. Luís H. C. Ferreira
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  3. Tales C. Pimenta
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Correspondence to Luís H. C. Ferreira.

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Colletta, G.D., Ferreira, L.H.C. & Pimenta, T.C. A 0.25-V 22-nS symmetrical bulk-driven OTA for low-frequency \(G_m\)-C applications in 130-nm digital CMOS process. Analog Integr Circ Sig Process 81, 377–383 (2014). https://doi.org/10.1007/s10470-014-0385-y

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  • DOI: https://doi.org/10.1007/s10470-014-0385-y

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