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Laser welding of sapphire wafers using a thin-film fresnoite glass solder

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Abstract

Two sapphire substrates are tightly bonded through a fresnoite-glass thin film, by irradiation with a 1,064 nm nanosecond laser. The composition of the glass solder at the bond interface changes, due to incorporation of Al from the upper substrate. The oxidic solder remains amorphous after laser irradiation, but after annealing (850 °C for 1 h) crystalline structures are observed in different morphologies, which are attributed not only to fresnoite, but also to Ba–Ti–Al–O phases, which lead to a strong luminescence of the laser irradiated region under UV excitation.

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Acknowledgments

The authors acknowledge financial support of FhG Internal Programs under Grant No. Attract 692 280. We are thank to Prof. C. Rüssel of Friedrich Schiller University Jena, Otto Schott Institute, Jena, (Germany) for providing fresnoite bulk glass for the PLD target, and to Holger Hochmuth for preparation of the fresnoite thin films by PLD. The Leipzig authors kindly acknowledge support of their work by Deutsche Forschungs—gemeinschaft (DFG) within Sonderforschungsbereich 762 “Functionality of oxide interfaces”.

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Correspondence to Araceli de Pablos-Martín.

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de Pablos-Martín, A., Ebert, M., Patzig, C. et al. Laser welding of sapphire wafers using a thin-film fresnoite glass solder. Microsyst Technol 21, 1035–1045 (2015). https://doi.org/10.1007/s00542-014-2398-y

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  • DOI: https://doi.org/10.1007/s00542-014-2398-y

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