Applied Physics B

, Volume 116, Issue 1, pp 141–146

Design and fabrication of highly dispersive semiconductor double-chirped mirrors

  • Agata Jasik
  • Maciej Dems
  • Paweł Wnuk
  • Piotr Wasylczyk
  • Anna Wójcik-Jedlińska
  • Kazimierz Regiński
  • Łukasz Zinkiewicz
  • Krzysztof Hejduk
Article

DOI: 10.1007/s00340-013-5662-4

Cite this article as:
Jasik, A., Dems, M., Wnuk, P. et al. Appl. Phys. B (2014) 116: 141. doi:10.1007/s00340-013-5662-4

Abstract

We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of −3,800 ± 100 fs2 in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer method was used to design the mirror multilayer stack. The mirror contains an epitaxial AlAs/GaAs structure topped with a SiNx antireflective layer.

Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Agata Jasik
    • 1
  • Maciej Dems
    • 2
  • Paweł Wnuk
    • 3
  • Piotr Wasylczyk
    • 4
  • Anna Wójcik-Jedlińska
    • 1
  • Kazimierz Regiński
    • 1
  • Łukasz Zinkiewicz
    • 4
  • Krzysztof Hejduk
    • 1
  1. 1.Institute of Electron TechnologyWarsawPoland
  2. 2.Institute of PhysicsLodz University of TechnologyLodzPoland
  3. 3.Institute of Physical Chemistry Polish Academy of SciencesWarsawPoland
  4. 4.Faculty of Physics, Institute of Experimental PhysicsUniversity of WarsawWarsawPoland

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