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Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission

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Abstract

We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780 nm. The effects of the coupling coefficient, the laser chip length, and the fabrication process onto the spectral linewidth are discussed. By optimizing both the cavity length and the coupling coefficient, we achieve an intrinsic spectral linewidth as small as 35 kHz at an output power of 270 mW.

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Acknowledgments

The author T.-P. Nguyen would like to acknowledge financial support from Vietnam National Foundation for Science & Technology Development (under the contract code 103.06-2010.18).

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Authors and Affiliations

  1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany

    T.-P. Nguyen, S. Spießberger, H. Wenzel, A. Wicht, A. Peters, G. Erbert & G. Tränkle

  2. School of Engineering Physics, Hanoi University of Science and Technology, Nr. 1 Dai Co Viet, Hanoi, Vietnam

    T.-P. Nguyen

  3. Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489, Berlin, Germany

    M. Schiemangk, A. Wicht & A. Peters

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  1. T.-P. Nguyen
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  2. M. Schiemangk
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  3. S. Spießberger
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  4. H. Wenzel
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  5. A. Wicht
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  7. G. Erbert
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  8. G. Tränkle
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Correspondence to G. Tränkle.

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Nguyen, TP., Schiemangk, M., Spießberger, S. et al. Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission. Appl. Phys. B 108, 767–771 (2012). https://doi.org/10.1007/s00340-012-5131-5

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  • DOI: https://doi.org/10.1007/s00340-012-5131-5

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