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Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film

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in the range of annealing temperatures used. The PL intensity, weight of the Si4+ states, and the volume fraction of Si nanocrystals exhibit a large increase as Ta>750 °C. The PL peak position is independent of the annealing temperature (Ta). From our observations, the green/blue light emission is related to the defects.

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Authors and Affiliations

  1. National Laboratory for Superlattices and Microstructures, P.O.Box 912, Beijing and Department of Physics, Graduate School, University of Science and Technology of China, P.O.Box 3908, Beijing 100039, China (E-mail: mfzhu@sun.ihep.ac.cn), , , , , , CN

    M. Zhu & G. Chen

  2. Institute of Microelectronics, Tsinghua University, Beijing 100084, China, , , , , , CN

    P. Chen

Authors
  1. M. Zhu
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  2. G. Chen
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  3. P. Chen
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Received: 10 July 1996/Accepted: 2 April 1997

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Zhu, M., Chen, G. & Chen, P. Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film . Appl Phys A 65, 195–198 (1997). https://doi.org/10.1007/s003390050565

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  • DOI: https://doi.org/10.1007/s003390050565

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