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BiFeO3/Al2O3 gate stack for metal-ferroelectric-insulator-silicon memory FET for IoT applications

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Abstract

The Effect of plasma enhanced atomic layer deposited (PEALD) Al2O3 buffer layer on the electrical and ferroelectric characteristics of the metal/ferroelectric/insulator/silicon (MFIS) gate stack has been investigated for ferroelectric field effect transistor (FeFET) structure for its potential application in internet of things. Radio frequency sputtering has been used for the deposition of ferroelectric (BiFeO3) film at room temperature. Structural and optical characteristics of the ferroelectric and dielectric films deposited on TiN and the silicon substrate has been obtained using X-ray diffractometer and laser ellipsometer. Polycrystalline rhombohedrally distorted perovskite structure of BiFeO3 film with dominant crystal peak {(104)/(110)} and refractive index 2.4 has been obtained at the annealing temperature of 500 °C. Different capacitor structures have been fabricated to obtain electrical and ferroelectric characteristics. Metal/ferroelectric/silicon structure shows the memory window of 4.75 V that has been further improved to 8.53 V with the introduction of 10 nm Al2O3 between ferroelectric and silicon as in MFIS structure. MFI(10 nm)S structure shows excellent data retention, fatigue resistant, and breakdown characteristics that make it a potential candidate for the gate stack of FeFET. To the best of author’s knowledge, this is the first report to integrate pure BiFeO3 film on PEALD-Al2O3/silicon substrate for non-volatile memory applications.

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Authors and Affiliations

  1. Department of Radio Engineering and Cybernetics, Moscow Institute of Physics and Technology, National Research University, Moscow, Russia

    Pramod Narayan Tripathi & Sanjeev Kumar Ojha

  2. Department of Computer Science and Control, Russian Academy of Science, Moscow, Russia

    Alexey Nazarov

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  1. Pramod Narayan Tripathi
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  2. Sanjeev Kumar Ojha
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  3. Alexey Nazarov
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Tripathi, P.N., Ojha, S.K. & Nazarov, A. BiFeO3/Al2O3 gate stack for metal-ferroelectric-insulator-silicon memory FET for IoT applications. Appl. Phys. A 127, 58 (2021). https://doi.org/10.1007/s00339-020-04203-z

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