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Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

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Abstract

In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which is attributed to the suppression of electron leakage and the enhancement of hole injection efficiency due to the alleviated strain force and the appropriately modified energy band caused by SLs EBL. The results also demonstrate that the efficiency droop is markedly reduced when the SLs EBL is adopted.

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Acknowledgments

This work is supported by the Natural Science Foundation of Guangdong Province (Grant No. S2011040005150) and Nature Science Foundation of China (Grant Nos. 61377065 and 61176043).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang & Guanghan Fan

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  1. Yi An Yin
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  2. Naiyin Wang
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  3. Shuti Li
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Correspondence to Naiyin Wang.

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Yin, Y.A., Wang, N., Li, S. et al. Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer. Appl. Phys. A 119, 41–44 (2015). https://doi.org/10.1007/s00339-015-9018-2

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