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Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode

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Abstract

A heterostructure device consisting of nitrogen-doped Mg0.12Zn0.88O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasma-assisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determined, and an output power of 34 nW was measured at an injection current of 8 mA. The film contains columnar structures with much air gaps, which assist in light scattering to achieve necessary gain for random lasing.

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Acknowledgments

The authors acknowledge the financial support from the Department of Energy (DE-FG02-08ER-46520).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA

    Muhammad M. Morshed, Zheng Zuo, Jian Huang & Jianlin Liu

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  1. Muhammad M. Morshed
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  2. Zheng Zuo
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  3. Jian Huang
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  4. Jianlin Liu
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Correspondence to Jianlin Liu.

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Morshed, M.M., Zuo, Z., Huang, J. et al. Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode. Appl. Phys. A 118, 817–821 (2015). https://doi.org/10.1007/s00339-014-8804-6

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  • DOI: https://doi.org/10.1007/s00339-014-8804-6

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