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Electrical parameters of Schottky contacts in CaCu3Ti4O12 thin film capacitors

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Abstract

CaCu3Ti4O12 (CCTO) thin films were grown by pulsed laser deposition on Pt and La0.9Sr1.1NiO4 (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance–voltage (C–V) and current–voltage (I–V) measurements as a function of frequency (40 Hz–1 MHz) and temperature (300–475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I–V characteristics and the increase in capacitance at low frequency for −0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.

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Acknowledgments

This work was supported by the STREP European project NUOTO, NMP3-CT-2006-032644.

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Authors and Affiliations

  1. Laboratoire GREMAN UMR 7347 Université F. Rabelais CNRS, Parc de Grandmont, 37200, Tours, France

    Romain Bodeux, Monique Gervais, Jérôme Wolfman & François Gervais

  2. STMicroelectronics, R&D, Rue Pierre ET Marie Curie, 37000, Tours, France

    Romain Bodeux

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  1. Romain Bodeux
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  2. Monique Gervais
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  3. Jérôme Wolfman
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  4. François Gervais
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Correspondence to Romain Bodeux.

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Bodeux, R., Gervais, M., Wolfman, J. et al. Electrical parameters of Schottky contacts in CaCu3Ti4O12 thin film capacitors. Appl. Phys. A 116, 2001–2006 (2014). https://doi.org/10.1007/s00339-014-8382-7

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  • DOI: https://doi.org/10.1007/s00339-014-8382-7

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