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Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface

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Abstract

Ultrashort laser pulses tightly focused inside a transparent material present an example of laser interaction with matter where all the laser-affected material remains inside the bulk, thus the mass is conserved. In this paper, we present the case where the high intensity of a laser pulse is above the threshold for optical breakdown, and the material is ionised in the focal area. We consider in detail a special case where a micro-explosion is formed at the boundary of a silicon surface buried under a 10-micron-thick oxidised layer, providing the opportunity to affect the silicon crystal by a strong shock wave and creating new material phases from the plasma state. We summarise the main conclusions on ultrafast laser-induced material modifications in confined geometry and discuss the prospects of confined micro-explosion for forming new silicon phases.

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Acknowledgments

This research was supported under Australian Research Council’s Discovery Project funding scheme (project number DP120102980). Partial support to this work by Air Force Office of Scientific Research, USA (FA9550-12-1-0482) is gratefully acknowledged. We also acknowledge the ANFF ACT Node for the access to their FIB system.

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Authors and Affiliations

  1. Laser Physics Centre, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 0200, Australia

    Ludovic Rapp, Eugene G. Gamaly & Andrei V. Rode

  2. Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 0200, Australia

    Bianca Haberl, Jodie E. Bradby & Jim S. Williams

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  1. Ludovic Rapp
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  2. Bianca Haberl
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  3. Jodie E. Bradby
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  4. Eugene G. Gamaly
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  6. Andrei V. Rode
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Correspondence to Andrei V. Rode.

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Rapp, L., Haberl, B., Bradby, J.E. et al. Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface. Appl. Phys. A 114, 33–43 (2014). https://doi.org/10.1007/s00339-013-8161-x

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  • DOI: https://doi.org/10.1007/s00339-013-8161-x

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