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Microhole machining of silicon wafer in air and under deionized water by pulsed UV laser system

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Abstract

The study investigated the laser microhole drilling performance of polycrystalline silicon using the trepanning drilling method combined with the helix swing path with varying parameters, including laser pulse energy, pulse repetition frequency, and galvanometric scan speed. A pulsed ultraviolet laser system was used in an atmospheric condition and under deionized water. Moreover, the trepanning method was used to obtain a larger via diameter. The surface morphology, taper angle, and melted residual high were evaluated using a three-dimensional confocal laser scanning microscope and field emission scanning electron microscope. This method can produce larger holes and can be applied to crystalline silicon, multicrystalline silicon, thin-film silicon, and other materials for photovoltaic applications.

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Acknowledgements

The authors thank the National Science Council of Taiwan for financially supporting this research under contract nos. NSC 100-2622-E-492-002-CC3 and NSC 99-2221-E-492-014, and measuring supports from Ms. Nien-Nan Chu of Nano/MEMS shop and Precision Machining Shop support the measurement instrument of Instrument Technology Research Center, Taiwan, are also acknowledged.

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Authors and Affiliations

  1. Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 30076, Taiwan

    Wen-Tse Hsiao, Shih-Feng Tseng, Kuo-Cheng Huang & Donyau Chiang

  2. Department of Mechatronics Engineering, National Changhua University of Education, Changhua, 50007, Taiwan

    Ming-Fei Chen

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  1. Wen-Tse Hsiao
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  2. Shih-Feng Tseng
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  3. Kuo-Cheng Huang
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  4. Donyau Chiang
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  5. Ming-Fei Chen
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Correspondence to Wen-Tse Hsiao.

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Hsiao, WT., Tseng, SF., Huang, KC. et al. Microhole machining of silicon wafer in air and under deionized water by pulsed UV laser system. Appl. Phys. A 110, 565–570 (2013). https://doi.org/10.1007/s00339-012-7128-7

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  • DOI: https://doi.org/10.1007/s00339-012-7128-7

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