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Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses

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Abstract

The selective ablation of thin (∼100 nm) SiO2 layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm2 at 2 ps to 480 mJ/cm2 at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm2, independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.

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Authors and Affiliations

  1. Institut für Physik, Martin-Luther-Universität, Von-Danckelmann-Platz 3, 06120, Halle, Germany

    T. Rublack, S. Hartnauer & G. Seifert

  2. Q-Cells SE, Sonnenallee 17–21, 06766, Bitterfeld-Wolfen, Germany

    P. Kappe & C. Swiatkowski

Authors
  1. T. Rublack
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  2. S. Hartnauer
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  3. P. Kappe
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  4. C. Swiatkowski
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  5. G. Seifert
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Correspondence to T. Rublack.

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Rublack, T., Hartnauer, S., Kappe, P. et al. Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses. Appl. Phys. A 103, 43–50 (2011). https://doi.org/10.1007/s00339-011-6352-x

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  • DOI: https://doi.org/10.1007/s00339-011-6352-x

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