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Processing advances in transparent Foturan® MEMS

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Abstract

A lithographic patterning process for Foturan® is demonstrated that optimizes the aspect ratio and side-wall roughness and eliminates all traces of white redeposit on the side walls. The structures may then be run through a post-etch anneal to further reduce side-wall roughness to approximately 4 nm. Thermal fusion bonding during the post-etch anneal allows for the production of three-dimensional structures. Finally, we report the optical properties of patterned Foturan® microstructures observed using a 780-nm distributed feedback laser.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, AL, 35899, USA

    John D. Williams

  2. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    C. Schmidt & D. Serkland

Authors
  1. John D. Williams
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  2. C. Schmidt
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  3. D. Serkland
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Correspondence to John D. Williams.

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Williams, J.D., Schmidt, C. & Serkland, D. Processing advances in transparent Foturan® MEMS. Appl. Phys. A 99, 777–782 (2010). https://doi.org/10.1007/s00339-010-5721-1

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  • DOI: https://doi.org/10.1007/s00339-010-5721-1

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