Article

Applied Physics A

, Volume 91, Issue 2, pp 333-335

Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

  • J.E. WilliamsAffiliated withDepartment of Physics, University of Alabama at Birmingham Email author 
  • , R.P. CamataAffiliated withDepartment of Physics, University of Alabama at Birmingham
  • , V.V. FedorovAffiliated withDepartment of Physics, University of Alabama at Birmingham
  • , S.B. MirovAffiliated withDepartment of Physics, University of Alabama at Birmingham

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.