Applied Physics A

, Volume 91, Issue 2, pp 333–335

Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

  • J.E. Williams
  • R.P. Camata
  • V.V. Fedorov
  • S.B. Mirov
Article

DOI: 10.1007/s00339-008-4410-9

Cite this article as:
Williams, J., Camata, R., Fedorov, V. et al. Appl. Phys. A (2008) 91: 333. doi:10.1007/s00339-008-4410-9

Abstract

We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • J.E. Williams
    • 1
  • R.P. Camata
    • 1
  • V.V. Fedorov
    • 1
  • S.B. Mirov
    • 1
  1. 1.Department of PhysicsUniversity of Alabama at BirminghamBirminghamUSA