Etching temperature dependence of optical properties of the electrochemically etched n-GaAs
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- Zeng, A., Zheng, M., Ma, L. et al. Appl. Phys. A (2006) 84: 317. doi:10.1007/s00339-006-3621-1
The GaAs granular films have been prepared by electrochemical anodic etching of n-GaAs in HCl electrolyte at different etching temperatures. The microstructure and optical properties of the films were investigated by micro-Raman spectrum, atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Raman spectra reveal marked redshift and broadening, which could be explained by phonon confinement model. Results show the GaAs nanocrystalline films have formed during the anodic etching process under certain chemical conditions. Two “infrared” PL bands at ∼860 nm and ∼920 nm and a strongly enhanced visible PL band envelope around 550 nm were observed in the film prepared at etching temperature of 50 °C. The “green” PL band envelope is attributed to both quantum confinement in GaAs nanocrystals and PL of Ga2O3 and As2O3. The results reveal that the energy band structure of GaAs granular films is closely related to the etching temperatures.