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Concept of deterministic single ion doping with sub-nm spatial resolution

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Abstract

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all chemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electronic devices.

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Authors and Affiliations

  1. RUBION, Ruhr-Universität Bochum, 44780, Bochum, Germany

    J. Meijer & T. Vogel

  2. Institut für Physik mit Ionenstrahlen, Ruhr-Universität Bochum, 44780, Bochum, Germany

    B. Burchard

  3. Institut für Nanostrukturtechnologie und Analytik (INA), Universität Kassel, Heinrich-Plett Strasse 40, 34132, Kassel, Germany

    I.W. Rangelow

  4. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., P.O. Box 51 01 19, 01314, Dresden, Germany

    L. Bischoff

  5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550, Stuttgart, Germany

    J. Wrachtrup, M. Domhan & F. Jelezko

  6. Abteilung Quanten-Informationsverarbeitung, Universität Ulm, Albert-Einstein-Allee 11, 89069, Ulm, Germany

    W. Schnitzler, S.A. Schulz, K. Singer & F. Schmidt-Kaler

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  1. J. Meijer
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  2. T. Vogel
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Correspondence to K. Singer.

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PACS

03.67.-a; 29.25.Ni; 61.72.Ji; 81.16.Rf; 85.40.Ry

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Meijer, J., Vogel, T., Burchard, B. et al. Concept of deterministic single ion doping with sub-nm spatial resolution. Appl. Phys. A 83, 321–327 (2006). https://doi.org/10.1007/s00339-006-3497-0

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  • DOI: https://doi.org/10.1007/s00339-006-3497-0

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