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Synthesis and characterisation of co-evaporated tin sulphide thin films

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Abstract

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Science, Bangalore, 560 012, India

    N. Koteeswara Reddy, K. Ramesh, R. Ganesan & E.S.R. Gopal

  2. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India

    K.T. Ramakrishna Reddy

  3. Department of Instrumentation, Indian Institute of Science, Bangalore, 560 012, India

    K.R. Gunasekhar

Authors
  1. N. Koteeswara Reddy
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  2. K. Ramesh
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  3. R. Ganesan
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  4. K.T. Ramakrishna Reddy
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  5. K.R. Gunasekhar
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  6. E.S.R. Gopal
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Correspondence to N. Koteeswara Reddy.

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PACS

78.40.Fy; 68.60.-p; 61.10.Nz; 68.55.-a; 78.66.-w

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Koteeswara Reddy, N., Ramesh, K., Ganesan, R. et al. Synthesis and characterisation of co-evaporated tin sulphide thin films. Appl. Phys. A 83, 133–138 (2006). https://doi.org/10.1007/s00339-005-3475-y

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  • DOI: https://doi.org/10.1007/s00339-005-3475-y

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