Article

Applied Physics A

, Volume 83, Issue 1, pp 133-138

Synthesis and characterisation of co-evaporated tin sulphide thin films

  • N. Koteeswara ReddyAffiliated withDepartment of Physics, Indian Institute of Science Email author 
  • , K. RameshAffiliated withDepartment of Physics, Indian Institute of Science
  • , R. GanesanAffiliated withDepartment of Physics, Indian Institute of Science
  • , K.T. Ramakrishna ReddyAffiliated withDepartment of Physics, Sri Venkateswara University
  • , K.R. GunasekharAffiliated withDepartment of Instrumentation, Indian Institute of Science
  • , E.S.R. GopalAffiliated withDepartment of Physics, Indian Institute of Science

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Abstract

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.