Applied Physics A

, Volume 81, Issue 1, pp 137-142

First online:

Electroless deposition of Ag on Pd-activated TiN/p-Si(100) substrate

  • H. TongAffiliated withDepartment of Chemistry, Lanzhou University
  • , C. WangAffiliated withDepartment of Chemistry, Lanzhou University Email author 

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access


Nano-thick Ag films were electrolessly deposited on TiN/p-Si(100) substrates. The substrates were prepared by sputtering TiN on p-Si(100) wafers. An activation process of the substrates was performed by immersing the substrates in a solution of 0.0019 moL L-1 PdCl2+0.45 moL L-1 HF+8.7 moL L-1 aceticacid+0.036 moL L-1 HCl so as to obtain the Pd seed layer. The general composition of the electroless Ag bath was 0.0032 moL L-1 AgNO3+2.24 moL L-1 NH3+0.56 moL L-1 aceticacid+0.1 moL L-1 NH2NH2 at pH 10.2. The morphologies of the Pd seed layer and the Ag films were characterized by atomic force microscopy (AFM). The effect of the Pd activation on electroless Ag deposition was tested by open circuit potential with time technology (OCP-t). For comparison, the morphology of the films deposited by electrochemical deposition on the substrates was also studied by AFM.