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Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor

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Abstract

Catalytic growth of 1-D GaN nanostructures is achieved at temperatures from 550 to 850 °C using NH3 and gallium acetylacetonate. Structural characterization of the 1-D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 °C, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1-D GaN nanostructures via the VLS mechanism. Possible mechanisms for forming nanoneedles at low temperatures are proposed.

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Authors and Affiliations

  1. Department of Chemical Engineering, National Cheng Kung University, 701, Tainan, Taiwan

    K.-W. Chang & J.-J. Wu

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  1. K.-W. Chang
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  2. J.-J. Wu
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Correspondence to J.-J. Wu.

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61.46.+w; 68.65.–k; 81.07.–b

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Chang, KW., Wu, JJ. Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor. Appl Phys A 77, 769–774 (2003). https://doi.org/10.1007/s00339-003-2229-y

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  • DOI: https://doi.org/10.1007/s00339-003-2229-y

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