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Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

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Abstract

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm × 78 µm. The DDA is supplied with 0.5 V and consumed only 1.23 µW, while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz, and the total harmonic distortion is 0.2% @ 1 kHz for 400 mV peak-to-peak input sine wave.

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Acknowledgements

Research described in this paper was financed by the Czech Science Foundation under Grant No. P102-15-21942S and by the National Sustainability Program under Grant LO1401. For the research, infrastructure of the SIX Center was used.

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Authors and Affiliations

  1. Department of Microelectronics, Brno University of Technology, Technická 10, Brno, Czech Republic

    Fabian Khateb

  2. Faculty of Biomedical Engineering, Czech Technical University in Prague, nám. Sítná 3105, Kladno, Czech Republic

    Fabian Khateb

  3. Department of Electrical Engineering, Technical University of Częstochowa, 42-201, Czestochowa, Poland

    Tomasz Kulej

  4. Department of Telecommunications Engineering, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand

    Montree Kumngern

  5. Electronics Laboratory, Department of Physics, University of Patras, 26504, Patras, Greece

    Costas Psychalinos

Authors
  1. Fabian Khateb
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  2. Tomasz Kulej
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  3. Montree Kumngern
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  4. Costas Psychalinos
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Correspondence to Fabian Khateb.

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Khateb, F., Kulej, T., Kumngern, M. et al. Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications. Circuits Syst Signal Process 38, 2829–2845 (2019). https://doi.org/10.1007/s00034-018-0999-x

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  • DOI: https://doi.org/10.1007/s00034-018-0999-x

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