Memristor-Based Low-Power High-Speed Nonvolatile Hybrid Memory Array Design

  • Khandoker Asif Faruque
  • Baishakhi Rani Biswas
  • A. B. M. Harun-ur Rashid
Article

DOI: 10.1007/s00034-016-0487-0

Cite this article as:
Faruque, K.A., Biswas, B.R. & Rashid, A.B.M.H. Circuits Syst Signal Process (2017). doi:10.1007/s00034-016-0487-0
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Abstract

In this paper, a memristor–transistor hybrid architecture-based nonvolatile memory array design approach has been proposed. Here, a single memory cell consists of a memristor and one transmission gate, whereas a conventional SRAM cell consists of six transistors. This proposed design has the advantage of being nonvolatile, having high switching speed and low power requirement. The proposed cell shows better performance in comparison with other published memristor–transistor hybrid memory cell.

Keywords

Memristor Transmission gate Nonvolatile High speed Low power 

Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  • Khandoker Asif Faruque
    • 1
  • Baishakhi Rani Biswas
    • 1
  • A. B. M. Harun-ur Rashid
    • 1
  1. 1.Bangladesh University of Engineering and TechnologyDhakaBangladesh

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