Summary
The performance of silicon micro-strip detectors after heavy irradiationhave beeninvestigated using a muonbeam. Large-area sensors have been irradiated with neutrons and protons, read-out with fast shaping time electronics, and operated at low temperature. The paper presents a study of the charge collection efficiency, signal-to-noise ratio and hit reconstruction efficiency of these silicon devices.
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Borrello, L., Bozzi, C., Dell’Orso, R. et al. Test results on heavily irradiated silicon detectors. Il Nuovo Cimento A (1971-1996) 112, 1285–1291 (1999). https://doi.org/10.1007/BF03185594
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DOI: https://doi.org/10.1007/BF03185594