Summary
A series of zinc stannate (Zn2 SnO4) thin films were prepared at four different substrate temperatures; namely, room-temperature (25°C), 50°C, 100°C and 200°C. Direct-current resistivity measurements were performed on these samples in the temperature range from room temperature (∼290 K) up to about 500 K. A phase transition (of positive temperature coefficient (PTC) of resistance) was observed in the thin film grown at room temperature at about 385 K. Other investigated samples showed a semiconducting behaviour of three distinct conduction mechanisms extending from intrinsic to thermal freeze-out conduction. The width of the band gapE g was found to depend on the substrate temperature and was discussed in terms of a formation of a band tailing. Thermal freeze-out was dominant at the lower temperature region.
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On leave from Department of Physics, Faculty of Science, Alexandria University, Alexandria, Egypt.
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Abboudy, S., Al-Hajri, A., Al-Shahrani, A.A. et al. Influence of substrate temperature on the electrical behaviour of zinc stannate thin films deposited by electron beam evaporation technique. Nouv Cim D 20, 1881–1890 (1998). https://doi.org/10.1007/BF03036604
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DOI: https://doi.org/10.1007/BF03036604