Abstract
The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.
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Project supported by the National Natural Science Foundation of China (Grant No. 19834080) and Zhou Peiyuan Special Foundation of Mathematics and Physics.
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Feng, S., Yu, D., Zhang, H. et al. Growth mechanism and quantum confinement effect of silicon nanowires. Sci. China Ser. A-Math. 42, 1316–1322 (1999). https://doi.org/10.1007/BF02876033
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DOI: https://doi.org/10.1007/BF02876033