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Pulsed laser deposition of indium antimonide

  • Proceedings Of The Workshop On ‘Hydrogen In Materials’, New Delhi, 1994
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Abstract

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Science, 560 012, Bangalore, India

    R Venkataraghavan, K M Satyalakshmi, K S R K Rao, A K Sreedhar, M S Hegde & H L Bhat

  2. Solid State and Structural Chemistry Unit, Indian Institute of Science, 560 012, Bangalore, India

    K M Satyalakshmi & M S Hegde

Authors
  1. R Venkataraghavan
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  2. K M Satyalakshmi
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  3. K S R K Rao
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  4. A K Sreedhar
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  5. M S Hegde
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  6. H L Bhat
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Additional information

Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995

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Venkataraghavan, R., Satyalakshmi, K.M., Rao, K.S.R.K. et al. Pulsed laser deposition of indium antimonide. Bull. Mater. Sci. 19, 123–129 (1996). https://doi.org/10.1007/BF02744794

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  • DOI: https://doi.org/10.1007/BF02744794

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