Journal of Chemical Sciences

, Volume 115, Issue 5, pp 401–410

Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Authors

  • S. Balaji
    • Department of InstrumentationIndian Institute of Science
  • S. Mohan
    • Department of InstrumentationIndian Institute of Science
  • D. V. S. Muthu
    • Department of PhysicsIndian Institute of Science
    • Department of PhysicsIndian Institute of Science
Article

DOI: 10.1007/BF02708231

Cite this article as:
Balaji, S., Mohan, S., Muthu, D.V.S. et al. J Chem Sci (2003) 115: 401. doi:10.1007/BF02708231

Abstract

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

Keywords

Ion beam sputteringultra thin Ge filmsinterference enhanced Raman spectroscopyphonon confinementatomic force microscopy
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© Indian Academy of Sciences 2003