Diffusion in the nickel-rich part of the Ni−Al system at 1000° to 1300°C; Ni3Al layer growth, diffusion coefficients, and interface concentrations
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- Janssen, M.M.P. MT (1973) 4: 1623. doi:10.1007/BF02668017
The formation of the Ni3Al layer in NiAl (55 at. pct Ni)-pure Ni diffusion couples at temperatures above 1000°C has been found to be controlled almost completely by volume diffusion. At 1000°C and below, the relatively small grain size of the Ni3Al compound in the layers caused such a large contribution from grain boundary diffusion, that the layer growth rates at 1000°C exceeded those at 1100°C and even those at 1200°C. In Ni3Al (75at. pct Ni)-pure Ni diffusion couples the Ni3Al compound rapidly converted into the solid solution of aluminum in nickel. Volume-diffusion coefficients calculated by the Boltzmann-Matano method yielded heats of activation of 55, 64, and 65 kcal·mol−1 for NiAl, Ni3Al and the solid solution of aluminum in nickel, respectively. In addition, eleven different types of diffusion couples were prepared from various Ni−Al alloys and annealed at 1000°C. Marker interface displacements and observations of porosity in these couples yielded a more detailed picture of the Kirkendall-effect than earlier work had done. The ratio of the intrinsic diffusion coefficients at the marker interface,D NI/D Al, is greater than one in the nickel-rich NiAl phase. For the Ni3Al phase no statement can be made on the basis of this work. When the marker interface is located in the nickel solid solution,D Ni/D Al is smaller than one. The phase boundary concentrations in these couples did not show the expected deviation from the equilibrium concentrations in two-phase alloys; this finding is discussed with regard to the free-energycomposition diagram.