Journal of Electronic Materials

, Volume 25, Issue 5, pp 851–854

Magnetic resonance studies of GaN based light emitting diodes

  • W. E. Caelos
  • E. R. Glaser
  • T. A. Kennedy
  • S. Nakamura
Special Issue: III-V Nitrides and Silicon

DOI: 10.1007/BF02666648

Cite this article as:
Caelos, W.E., Glaser, E.R., Kennedy, T.A. et al. JEM (1996) 25: 851. doi:10.1007/BF02666648

Abstract

We report the application of electrical detection of magnetic resonance (EDMR) and electroluminescence detection of magnetic resonance (ELDMR) to study the recombination processes in InGaN/AlGaN double heterostructure p-n junctions. These techniques are especially well suited to the problems of defects in device structures in that they are much more sensitive than conventional paramagnetic resonance and are responsive to only those defects involved in the electrooptical properties of the structure. One resonance is observed at g≈2.00 and is identified as a Zn-related acceptor trap in the InGaN layer. A second resonance with g≈1.99 is identified as a deep donor.

Key words

Electroluminescence electron spin resonance GaN light emitting diodes (LEDs) 

Copyright information

© The Metallurgical of Society of AIME 1996

Authors and Affiliations

  • W. E. Caelos
    • 1
  • E. R. Glaser
    • 1
  • T. A. Kennedy
    • 1
  • S. Nakamura
    • 2
  1. 1.Naval Research LaboratoryWashington
  2. 2.Nichia Chemical Industries, Ltd.TokushimaJapan

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