Journal of Materials Science

, Volume 21, Issue 2, pp 625–629

Pressure-induced polymorphous crystallization in bulk Si20Te80 glass


  • S. Asokan
    • Department of PhysicsIndian Institute of Science
  • E. S. R. Gopal
    • Department of PhysicsIndian Institute of Science
  • G. Parthasarathy
    • Instrumentation and Services UnitIndian Institute of Science

DOI: 10.1007/BF01145533

Cite this article as:
Asokan, S., Gopal, E.S.R. & Parthasarathy, G. J Mater Sci (1986) 21: 625. doi:10.1007/BF01145533


The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.

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© Chapman and Hall Ltd. 1986