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Thermophysical properties data on molten semiconductors

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Abstract

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.

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Abbreviations

ρ :

Density

C p :

Specific heat

ν :

Kinematic viscosity

μ :

Dynamic viscosityμ=νρ

κ :

Thermal diffusivity

λ :

Thermal conductivityλ=κCp ρ

β :

Volumetric thermal expansion coefficient

γ :

Surface tension

dγ/dT :

Temperature coefficient of surface tension

g :

Gravitational acceleration

T :

Temperature

ΔT :

Temperature difference

L :

Characteristic dimension

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  1. Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, 305, Ibaraki, Japan

    S. Nakamura & T. Hibiya

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Nakamura, S., Hibiya, T. Thermophysical properties data on molten semiconductors. Int J Thermophys 13, 1061–1084 (1992). https://doi.org/10.1007/BF01141216

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