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Calculation of trap parameters from thermally stimulated photoconduction data

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Abstract

The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels.

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Literature cited

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Authors and Affiliations

  1. Chernovits State University, USSR

    V. P. Zayachkivskii, P. P. Beisyuk, E. S. Nikonyuk & A. V. Savitskii

Authors
  1. V. P. Zayachkivskii
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  2. P. P. Beisyuk
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  3. E. S. Nikonyuk
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  4. A. V. Savitskii
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 111–115, July, 1976.

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Zayachkivskii, V.P., Beisyuk, P.P., Nikonyuk, E.S. et al. Calculation of trap parameters from thermally stimulated photoconduction data. Soviet Physics Journal 19, 921–924 (1976). https://doi.org/10.1007/BF00892916

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  • DOI: https://doi.org/10.1007/BF00892916

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