Nanoscale dry etching of germanium by using inductively coupled CF4 plasma
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- Shim, K., Yang, H.Y., Kil, Y. et al. Electron. Mater. Lett. (2012) 8: 423. doi:10.1007/s13391-012-1109-z
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The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ∼200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ∼1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.