Article

Electronic Materials Letters

, Volume 8, Issue 4, pp 423-428

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

  • Kyu-Hwan ShimAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Ha Yong YangAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Yeon-Ho KilAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Hyeon Deok YangAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Jong-Han YangAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Woong-Ki HongAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Sukill KangAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Tae Soo JeongAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University
  • , Taek Sung KimAffiliated withSemiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University Email author 

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Abstract

The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ∼200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ∼1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

Keywords

nanoscale etching plasma ICP Ge