Electronic Materials Letters

, Volume 8, Issue 1, pp 1–4

Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers

  • An Mao
  • Jaehee Cho
  • E. Fred Schubert
  • Joong Kon Son
  • Cheolsoo Sone
  • Woo Jin Ha
  • Sunyong Hwang
  • Jong Kyu Kim
Article

DOI: 10.1007/s13391-011-0780-9

Cite this article as:
Mao, A., Cho, J., Schubert, E.F. et al. Electron. Mater. Lett. (2012) 8: 1. doi:10.1007/s13391-011-0780-9

Abstract

GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 0.4 μm-thick AlGaN cladding layers and two quantum wells (QWs), designed for investigating the origin of efficiency droop, are demonstrated to have a lower efficiency droop than typical GaInN/GaN LEDs with 5 QWs. Considering the much less electron leakage over the active region, and the larger carrier density due to the smaller active volume of the LED with AlGaN cladding layers than those of the typical LED, it is suggested that the dominant mechanism responsible for the efficiency droop is electron leakage rather than the Auger recombination which scales with the cubic power of the carrier density.

Keywords

GaN light-emitting diodes efficiency droop laser diode 

Copyright information

© The Korean Institute of Metals and Materials and Springer Netherlands 2012

Authors and Affiliations

  • An Mao
    • 1
  • Jaehee Cho
    • 1
  • E. Fred Schubert
    • 1
  • Joong Kon Son
    • 2
  • Cheolsoo Sone
    • 2
  • Woo Jin Ha
    • 3
  • Sunyong Hwang
    • 3
  • Jong Kyu Kim
    • 3
  1. 1.Future Chips Constellation, Department of Electrical, Computer, and Systems EngineeringRensselaer Polytechnic InstituteTroyUSA
  2. 2.LED LabCorporate R&D Institute, Samsung LEDSuwonKorea
  3. 3.Department of Materials Science and EngineeringPohang University of Science and TechnologyPohangKorea

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