Original Article

Applied Nanoscience

, Volume 4, Issue 1, pp 121-125

Open Access This content is freely available online to anyone, anywhere at any time.

Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111)

  • Mahesh KumarAffiliated withMaterials Research Centre, Indian Institute of ScienceCentral Research Laboratory, Bharat Electronics Email author 
  • , Mohana K. RajpalkeAffiliated withMaterials Research Centre, Indian Institute of Science
  • , Basanta RoulAffiliated withMaterials Research Centre, Indian Institute of ScienceCentral Research Laboratory, Bharat Electronics
  • , Thirumaleshwara N. BhatAffiliated withMaterials Research Centre, Indian Institute of Science
  • , S. B. KrupanidhiAffiliated withMaterials Research Centre, Indian Institute of Science

Abstract

InN nanorods (NRs) were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. The growth of InN NRs has been demonstrated using an electron-beam evaporated (~2 nm) Au layer prior to the initiation of growth. The structure and morphology of as deposited Au film, annealed at 600 °C, and InN NRs were investigated using X-ray photoelectron spectroscopy and scanning electron microscopy. Chemical characterization was performed with energy dispersive X-ray analysis. Single-crystalline wurtzite structure of InN NRs is verified by transmission electron microscopy. The formation process of NRs is investigated and a qualitative mechanism is proposed.

Keywords

InN Nanostructures MBE