Abstract
We present a novel method of fabricating ultra-precise patterns using multiple x-ray irradiations and precision stage movement. As the typical deep x-ray mask by ultraviolet (UV) lithography can have a minimum several-microns-scale pattern, fabrication of smaller patterns using general deep x-ray lithography with such a UV-process-based x-ray mask has limitations. In the present study, a substrate was loaded onto a precision stage allowing independent motion in the horizontal and vertical directions. The vertical stage, during x-ray irradiation, moves only up and down; after the initial x-ray irradiation, the horizontal stage moves the substrate in the horizontal direction in preparation for the next x-ray irradiation, which subsequently is carried out. The horizontal movement distance, crucially, can be adjusted to control the fabricated pattern size. By these combinations of precision stage movements and multiple x-ray irradiations, a pattern smaller than the original can be fabricated. The experimental results show in fact that this simple technique can be easily utilized for sub-micron-scale pattern fabrication using the typical UV-based x-ray mask.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Seisyan, R. P., “Nanolithography in Microelectronics: A Review,” Technical Physics, Vol. 56, No. 8, pp. 1061–1073, 2011.
Manfrinato, V. R., Zhang, L., Su, D., Duan, H., Hobbs, R. G., Stach, E. A., and Berggren, K. K., “Resolution Limits of Electron-Beam Lithography Toward the Atomic Scale,” Nano Letters, Vol. 13, No. 4, pp. 1555–1558, 2013.
Tseng, A. A., “Recent Developments in Nanofabrication using Focused Ion Beams,” Small, Vol. 1, No. 10, pp. 924–939, 2005.
Piner, R. D., Zhu, J., Xu, F., Hong, S., and Mirkin, C. A., ““Dip-Pen” Nanolithography,” Science, Vol. 283, No. 5402, pp. 661–663, 1999.
Stulen, R. H. and Sweeney, D. W., “Extreme Ultraviolet Lithography,” IEEE Journal of Quantum Electronics, Vol. 35, No. 5, pp. 694–699, 1999.
Wagner, C. and Harned, N., “EUV Lithography: Lithography Gets Extreme,” Nature Photonics, Vol. 4, No. 1, pp. 24–26, 2010.
Tallents, G., Wagenaars, E., and Pert, G., “Optical Lithography: Lithography at EUV Wavelengths,” Nature Photonics, Vol. 4, No. 12, pp. 809–811, 2010.
Feigl, T., Yulin, S., Benoit, N., and Kaiser, N., “EUV Multilayer Optics,” Microelectronic Engineering, Vol. 83, No. 4, pp. 703–706, 2006.
Becker, E. W., Ehrfeld, W., Hagmann, P., Maner, A., and Münchmeyer, D., “Fabrication of Microstructures with High Aspect Ratios and Great Structural Heights by Synchrotron Radiation Lithography, Galvanoforming, and Plastic Moulding (LIGA Process),” Microelectronic Engineering, Vol. 4, No. 1, pp. 35–56, 1986.
Malek, C. K. and Saile, V., “Applications of LIGA Technology to Precision Manufacturing of High-Aspect-Ratio Micro-Components and-Systems: A Review,” Microelectronics Journal, Vol. 35, No. 2, pp. 131–143, 2004.
Meyer, P., Schulz, J., Hahn, L., and Saile, V., “Why you will use the Deep X-ray LIGA Technology to Produce MEMS?” Microsystem Technologies, Vol. 14, No. 9–11, pp. 1491–1497, 2008.
Snigirev, A. and Snigireva, I., “High Energy X-ray Micro-Optics,” Comptes Rendus Physique, Vol. 9, No. 5, pp. 507–516, 2008.
Vora, K. D., Lochel, B., Harvey, E. C., Hayes, J., and Peele, A. G., “AFM-Measured Surface Roughness of SU-8 Structures Produced by Deep X-ray Lithography,” Journal of Micromechanics and Microengineering, Vol. 16, No. 10, pp. 1975–1983, 2006.
Achenbach, S., Boerner, M., Kinuta, S., Bacher, W., Mohr, J., et al., “Structure Quality in Deep X-ray Lithography Applying Commercial Polyimide-based Masks,” Microsystem Technologies, Vol. 13, No. 3–4, pp. 349–353, 2007.
Yue, W., Chiam, S. Y., Ren, Y., Kan, J. A., Osipowicz, T., et al., “The Fabrication of X-ray Masks using Proton Beam Writing,” Journal of Micromechanics and Microengineering, Vol. 18, No. 8, Paper No. 085010, 2008.
Gorelick, S., Guzenko, V. A., Vila-Comamala, J., and David, C., “Direct E-Beam Writing of Dense and High Aspect Ratio Nanostructures in Thick Layers of PMMA for Electroplating,” Nanotechnology, Vol. 21, No. 29, Paper No. 295303, 2010.
Mappes, T., Achenbach, S., and Mohr, J., “X-ray Lithography for Devices with High Aspect Ratio Polymer Submicron Structures,” Microelectronic Engineering, Vol. 84, No. 5–8, pp. 1235–1239, 2007.
Lin, B. J., “Optical Lithography-Present and Future Challenges,” Comptes Rendus Physique, Vol. 7, No. 8, pp. 858–874, 2006.
Babin, S., Glushenko, G., Weber, T., Kaesebier, T., Kley, E. B., and Szeghalmi, A., “Application of Double Patterning Technology to Fabricate Optical Elements: Process Simulation, Fabrication, and Measurement,” Journal of Vacuum Science & Technology B, Vol. 30, No. 3, Paper No. 031605, 2012.
Kinuta, S., Saita, Y., Kobayashi, M., Boerner, M., Saile, V., and Hosaka, S., “Polyimide-based X-ray Masks with Advanced Performance of Pattern Accuracy and Thermal Stability,” Microsystem Technologies, Vol. 16, No. 8–9, pp. 1299–1302, 2010.
Pantenburg, F. J. and Mohr, J., “Influence of Secondary Effects on the Structure Quality in Deep X-ray Lithography,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 97, No. 1, pp. 551–556, 1995.
Author information
Authors and Affiliations
Corresponding author
Additional information
These authors equally contributed as corresponding authors
Rights and permissions
About this article
Cite this article
Kim, J.H., Chang, S.S. & Lim, G. A simple approach for an ultra-precise patterning using deep x-ray lithography with a micron-patterned x-ray mask. Int. J. Precis. Eng. Manuf. 15, 2385–2390 (2014). https://doi.org/10.1007/s12541-014-0604-6
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12541-014-0604-6