Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
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- Scalise, E., Houssa, M., Pourtois, G. et al. Nano Res. (2012) 5: 43. doi:10.1007/s12274-011-0183-0
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The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2.