Nano Research

, Volume 3, Issue 4, pp 264–270

In situ etching for total control over axial and radial nanowire growth

Authors

    • Solid State PhysicsLund University
  • Jesper Wallentin
    • Solid State PhysicsLund University
  • Johanna Trägårdh
    • Solid State PhysicsLund University
  • Peter Ramvall
    • Solid State PhysicsLund University
  • Martin Ek
    • Polymer & Materials Chemistry/nCHREMLund University
  • L. Reine Wallenberg
    • Polymer & Materials Chemistry/nCHREMLund University
  • Lars Samuelson
    • Solid State PhysicsLund University
  • Knut Deppert
    • Solid State PhysicsLund University

DOI: 10.1007/s12274-010-1029-x

Abstract

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1029-x/MediaObjects/12274_2010_1029_Fig1_HTML.jpg

Keywords

MOVPE nanowire growth in situ etching photoluminescence

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010