Research Article

Nano Research

, Volume 3, Issue 4, pp 264-270

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

In situ etching for total control over axial and radial nanowire growth

  • Magnus T. BorgströmAffiliated withSolid State Physics, Lund University Email author 
  • , Jesper WallentinAffiliated withSolid State Physics, Lund University
  • , Johanna TrägårdhAffiliated withSolid State Physics, Lund University
  • , Peter RamvallAffiliated withSolid State Physics, Lund University
  • , Martin EkAffiliated withPolymer & Materials Chemistry/nCHREM, Lund University
  • , L. Reine WallenbergAffiliated withPolymer & Materials Chemistry/nCHREM, Lund University
  • , Lars SamuelsonAffiliated withSolid State Physics, Lund University
  • , Knut DeppertAffiliated withSolid State Physics, Lund University

Abstract

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
http://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1029-x/MediaObjects/12274_2010_1029_Fig1_HTML.jpg

Keywords

MOVPE nanowire growth in situ etching photoluminescence