Nano Research

, Volume 3, Issue 4, pp 264–270

In situ etching for total control over axial and radial nanowire growth

  • Magnus T. Borgström
  • Jesper Wallentin
  • Johanna Trägårdh
  • Peter Ramvall
  • Martin Ek
  • L. Reine Wallenberg
  • Lars Samuelson
  • Knut Deppert
Open AccessResearch Article

DOI: 10.1007/s12274-010-1029-x

Cite this article as:
Borgström, M.T., Wallentin, J., Trägårdh, J. et al. Nano Res. (2010) 3: 264. doi:10.1007/s12274-010-1029-x
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Abstract

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1029-x/MediaObjects/12274_2010_1029_Fig1_HTML.jpg

Keywords

MOVPEnanowire growthin situ etchingphotoluminescence
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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Magnus T. Borgström
    • 1
  • Jesper Wallentin
    • 1
  • Johanna Trägårdh
    • 1
  • Peter Ramvall
    • 1
  • Martin Ek
    • 2
  • L. Reine Wallenberg
    • 2
  • Lars Samuelson
    • 1
  • Knut Deppert
    • 1
  1. 1.Solid State PhysicsLund UniversityLundSweden
  2. 2.Polymer & Materials Chemistry/nCHREMLund UniversityLundSweden
  3. 3.H. H. Wills Physics LaboratoryUniversity of BristolBristolUK