Nano Research

, Volume 2, Issue 12, pp 931–937

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Authors

  • Joanne W. L. Yim
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
  • Deirdre Chen
    • Department of Materials Science and EngineeringUniversity of California
  • Gregory F. Brown
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
Open AccessResearch Article

DOI: 10.1007/s12274-009-9095-7

Cite this article as:
Yim, J.W.L., Chen, D., Brown, G.F. et al. Nano Res. (2009) 2: 931. doi:10.1007/s12274-009-9095-7
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Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9095-7/MediaObjects/12274_2009_9095_Fig1_HTML.jpg

Keywords

Aspect ratiodopingnanowireszinc selenidezinc telluride
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© Tsinghua University Press and Springer Berlin Heidelberg 2009