Nano Research

, Volume 2, Issue 7, pp 553–557

Bending-induced conductance increase in individual semiconductor nanowires and nanobelts

  • Xiaobing Han
  • Guangyin Jing
  • Xinzheng Zhang
  • Renmin Ma
  • Xuefeng Song
  • Jun Xu
  • Zhimin Liao
  • Ning Wang
  • Dapeng Yu
Open AccessResearch Article

DOI: 10.1007/s12274-009-9053-4

Cite this article as:
Han, X., Jing, G., Zhang, X. et al. Nano Res. (2009) 2: 553. doi:10.1007/s12274-009-9053-4

Abstract

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9053-4/MediaObjects/12274_2009_9053_Fig1_HTML.jpg

Keywords

ZnO nanowiresbending strainpiezoresistanceconductance enhancement
Download to read the full article text

Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • Xiaobing Han
    • 1
  • Guangyin Jing
    • 1
  • Xinzheng Zhang
    • 1
  • Renmin Ma
    • 1
  • Xuefeng Song
    • 1
  • Jun Xu
    • 1
  • Zhimin Liao
    • 1
  • Ning Wang
    • 2
  • Dapeng Yu
    • 1
  1. 1.State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of PhysicsPeking UniversityBeijingChina
  2. 2.Physics DepartmentHong Kong University of Science and TechnologyHong KongChina