Nano Research

, Volume 1, Issue 2, pp 123–128

Vertical nanowire array-based light emitting diodes

Open Access
Research Article

DOI: 10.1007/s12274-008-8017-4

Cite this article as:
Lai, E., Kim, W. & Yang, P. Nano Res. (2008) 1: 123. doi:10.1007/s12274-008-8017-4

Abstract

Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.

Keywords

ZnO nanowire electroluminescence LED waveguiding 
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Copyright information

© Tsinghua Press and Springer-Verlag GmbH 2008

Authors and Affiliations

  1. 1.Department of ChemistryUniversity of CaliforniaBerkeleyUSA
  2. 2.Molecular Foundry, Material Sciences DivisionLawrence Berkeley National LaboratoryBerkeleyUSA

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