Frontiers of Optoelectronics

, Volume 6, Issue 4, pp 448–451

Lasing characteristics of curved semiconductor nanowires

Authors

  • Weisong Yang
    • State Key Laboratory of Modern Optical Instrumentation, Department of Optical EngineeringZhejiang University
  • Yipei Wang
    • State Key Laboratory of Modern Optical Instrumentation, Department of Optical EngineeringZhejiang University
  • Yaoguang Ma
    • State Key Laboratory for Mesoscopic Physics, Department of PhysicsPeking University
  • Chao Meng
    • State Key Laboratory of Modern Optical Instrumentation, Department of Optical EngineeringZhejiang University
  • Xiaoqin Wu
    • State Key Laboratory of Modern Optical Instrumentation, Department of Optical EngineeringZhejiang University
    • State Key Laboratory of Modern Optical Instrumentation, Department of Optical EngineeringZhejiang University
Research Article

DOI: 10.1007/s12200-013-0344-8

Cite this article as:
Yang, W., Wang, Y., Ma, Y. et al. Front. Optoelectron. (2013) 6: 448. doi:10.1007/s12200-013-0344-8
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Abstract

The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.

Keywords

semiconductor nanowirelasing characteristicsred-shiftbending lossdominant peaks

Copyright information

© Higher Education Press and Springer-Verlag Berlin Heidelberg 2013