Abstract
Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.
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Kumar, M., Bhat, T.N., Rajpalke, M.K. et al. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. Bull Mater Sci 33, 221–226 (2010). https://doi.org/10.1007/s12034-010-0034-8
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DOI: https://doi.org/10.1007/s12034-010-0034-8