Sahoo, P.S., Panigrahi, A., Patri, S.K. et al. Bull Mater Sci (2010) 33: 129. doi:10.1007/s12034-010-0018-8
Polycrystalline sample of Ba3Sr2DyTi3V7O30 was prepared at 950°C using a high-temperature solid-state reaction technique. X-ray structural analysis indicated the formation of a single-phase orthorhombic structure with lattice parameters: a = 12·2719 (39) Å, b = 8·9715(39) Å and c = 19·7812(39) Å. Microstructural study showed densely packed uniform distribution of grains over the surface of the sample. The a.c. impedance plots were used as tools to analyse the electrical response of the sample as a function of frequency at different temperatures (30–500°C). These plots revealed the presence of grain boundary effect, from 200·C onwards. Complex impedance analysis showed non-Debye type of dielectric relaxation. The Nyquist plots showed the negative temperature coefficient of resistance character of Ba3Sr2DyTi3V7O30. A hopping mechanism of electrical transport processes in the system is evident from the modulus analysis. The activation energy of the compound (calculated both from loss and modulus spectrum) is the same, and hence the relaxation process may be attributed to the same type of charge carrier.