Bulletin of Materials Science

, Volume 31, Issue 3, pp 579–584

Raman spectroscopy of graphene on different substrates and influence of defects

Article

DOI: 10.1007/s12034-008-0090-5

Cite this article as:
Das, A., Chakraborty, B. & Sood, A.K. Bull Mater Sci (2008) 31: 579. doi:10.1007/s12034-008-0090-5

Abstract

We show the evolution of Raman spectra with a number of graphene layers on different substrates, SiO2/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift up to 12 cm−1 depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by ∼ 6 cm−1 and the 2D band frequency by ∼ 20 cm−1. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.

Keywords

Graphene Raman spectroscopy nano-carbon phonons 

Copyright information

© Indian Academy of Sciences 2008

Authors and Affiliations

  • Anindya Das
    • 1
  • Biswanath Chakraborty
    • 1
  • A. K. Sood
    • 1
  1. 1.Department of PhysicsIndian Institute of ScienceBangaloreIndia

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