Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers
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- Yan, Q., Zhang, Y. & Li, J. Optoelectron. Lett. (2014) 10: 258. doi:10.1007/s11801-014-4062-2
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A dual-blue light-emitting diode (LED) with asymmetric AlGaN composition-graded barriers but without an AlGaN electron blocking layer (EBL) is analyzed numerically. Its spectral stability and efficiency droop are improved compared with those of the conventional InGaN/GaN quantum well (QW) dual-blue LEDs based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. The improvement can be attributed to the markedly enhanced injection of holes into the dual-blue active regions and effective reduction of leakage current.