Optoelectronics Letters

, Volume 10, Issue 4, pp 258–261

Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers

  • Qi-rong Yan (严启荣)
  • Yong Zhang (章勇)
  • Jun-zheng Li (李军政)
Article

DOI: 10.1007/s11801-014-4062-2

Cite this article as:
Yan, Q., Zhang, Y. & Li, J. Optoelectron. Lett. (2014) 10: 258. doi:10.1007/s11801-014-4062-2

Abstract

A dual-blue light-emitting diode (LED) with asymmetric AlGaN composition-graded barriers but without an AlGaN electron blocking layer (EBL) is analyzed numerically. Its spectral stability and efficiency droop are improved compared with those of the conventional InGaN/GaN quantum well (QW) dual-blue LEDs based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. The improvement can be attributed to the markedly enhanced injection of holes into the dual-blue active regions and effective reduction of leakage current.

Copyright information

© Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Qi-rong Yan (严启荣)
    • 1
  • Yong Zhang (章勇)
    • 2
  • Jun-zheng Li (李军政)
    • 3
  1. 1.Guangdong Vocational School of PolytechnicGuangzhouChina
  2. 2.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and TechnologySouth China Normal UniversityGuangzhouChina
  3. 3.Foshan Nation Star Optoelectronics Co. Ltd.FoshanChina

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